| PART |
Description |
Maker |
| W9864G6IH W9864G6IH-5 W9864G6IH-6 W9864G6IH-7 W986 |
1M 】 4BANKS 】 16BITS SDRAM
|
Winbond
|
| HY5W2B6DLF-HE HY5W2B6DLFP-HE |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| IS42VM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| IS45SMVM32800K IS42VM32800K IS42RMVM32800K |
2M x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42VM32800E |
2M x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz
4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
| IS46LR32200B |
512K x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
| IS46LR32800F IS46LR32800F-6BLA2 |
2M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
| TC58DAM72A1FT00 TC58DVM72A1F |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM 128兆位6米x 8 BITS/8M x 16位）的CMOS NAND型E2PROM
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
Toshiba, Corp.
|
| IS42VM16200D-75BLI IS42VM16200D-6BLI |
1M x 16Bits x 2Banks Low Power Synchronous DRAM
|
Integrated Silicon Solu...
|
| HYB18M512160BFX HYB18M512160BFX-7.5 |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM
|
Qimonda AG
|
| HYB18L256160B |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM DRAM的针对移动应56兆移动RAM
|
Qimonda AG
|
